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Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD
Lin C.H.2; Friddle P.A.2; Ma C.H.2; Chen H.2
2001-12-01
Source PublicationFerroelectrics
Volume259
Issue1
Pages229-238
AbstractHighly (002) textured Pb(ScTa)TiO (PSTT) (with x = 0-0.3) thin films were grown on LaNiO buffered Si substrates using metal-organic chemical vapor deposition (MOCVD) technique at temperatures ranging from 600 to 685°C. Dielectric properties showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter and increased the dielectric constants. Dielectric dispersion behavior was observed, along with a diffuse phase transition, characterizing the relaxor properties of PSTT. © 2001 Taylor & Francis.
Keywordcomposition dielectric dispersion growth temperature Relaxor
DOI10.1080/00150190108008743
URLView the original
Language英語
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Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.City University of Hong Kong
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lin C.H.,Friddle P.A.,Ma C.H.,et al. Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD[C],2001:229-238.
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