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Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method
Lin C.-H.2; Friddle P.A.2; Ma C.-H.2; Chen H.1
2002-03-01
Source PublicationTamkang Journal of Science and Engineering
ISSN15606686
Volume5Issue:1Pages:1-6
AbstractHighly (002) textured Pb(ScTa)TiO (PSTT) (with composition x = 0 - 0.3) thin films were deposited using metal-organic chemical vapor deposition (MOCVD) technique at temperature ranging from 600°C to 685°C. Dielectric properties of these PSTT thin films showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter, moving T from -10 to 120°C with the dielectric constant peak value increasing from 1397 to 1992 (measured at 1 kHz) when composition x went from 0 to 0.3. Loss tangent values were generally below 0.025. For PSTT thin films with composition near its morphotropic boundary (x = 0.3), the room temperature dielectric constants increased from 980 to around 1600 as the growth temperature increased from 650 to 685°C. In addition, the dielectric dispersion behaviors of films grown at different temperatures were compared.
KeywordDielectric Properties MOCVD PSTT Relaxor Ferroelectric Thin Films
URLView the original
Language英語
Fulltext Access
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.City University of Hong Kong
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lin C.-H.,Friddle P.A.,Ma C.-H.,et al. Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method[J]. Tamkang Journal of Science and Engineering,2002,5(1):1-6.
APA Lin C.-H.,Friddle P.A.,Ma C.-H.,&Chen H..(2002).Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method.Tamkang Journal of Science and Engineering,5(1),1-6.
MLA Lin C.-H.,et al."Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method".Tamkang Journal of Science and Engineering 5.1(2002):1-6.
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