UM
Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process
Zhai J.2; Yao Y.2; Li X.2; Hung T.F.2; Xu Z.K.2; Chen H.2; Colla E.V.3; Wu T.B.1
2002-10-01
Source PublicationJournal of Applied Physics
ISSN00218979
Volume92Issue:7Pages:3990-3994
AbstractAntiferroelectric PbZrO (PZ) films have been fabricated on LaNiO /Pt/Ti/SiO /Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm . Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO on Pt/Ti/SiO /Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops. © 2002 American Institute of Physics.
DOI10.1063/1.1505981
URLView the original
Language英語
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Cited Times [WOS]:37   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.National Tsing Hua University
2.City University of Hong Kong
3.University of Illinois at Urbana-Champaign
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GB/T 7714
Zhai J.,Yao Y.,Li X.,et al. Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process[J]. Journal of Applied Physics,2002,92(7):3990-3994.
APA Zhai J..,Yao Y..,Li X..,Hung T.F..,Xu Z.K..,...&Wu T.B..(2002).Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process.Journal of Applied Physics,92(7),3990-3994.
MLA Zhai J.,et al."Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process".Journal of Applied Physics 92.7(2002):3990-3994.
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