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Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process
Jiwei Z.2; Cheung M.H.2; Xu Z.K.2; Li X.2; Chen H.2; Colla E.V.3; Wu T.B.1
2002-11-04
Source PublicationApplied Physics Letters
ISSN00036951
Volume81Issue:19Pages:3621-3623
AbstractAntiferroelectric (Pb,Nb)(Zr,Sn,Ti)O thin films were deposited via a sol-gel process on LaNiO-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm, which is equal to that observed in bulk samples. © 2002 American Institute of Physics.
DOI10.1063/1.1519944
URLView the original
Language英語
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Cited Times [WOS]:22   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.National Tsing Hua University
2.City University of Hong Kong
3.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Jiwei Z.,Cheung M.H.,Xu Z.K.,et al. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process[J]. Applied Physics Letters,2002,81(19):3621-3623.
APA Jiwei Z..,Cheung M.H..,Xu Z.K..,Li X..,Chen H..,...&Wu T.B..(2002).Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process.Applied Physics Letters,81(19),3621-3623.
MLA Jiwei Z.,et al."Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process".Applied Physics Letters 81.19(2002):3621-3623.
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