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Dielectric and ferroelectric properties of Ba(Zr0.35Ti 0.65)O3 thin films grown by a sol-gel process
Jiwei Z.1; Xi Y.1; Bo S.1; Liangying Z.1; Chen H.2
2003-12-01
Source PublicationJournal of Electroceramics
ISSN13853449
Volume11Issue:3Pages:157-161
AbstractThe Ba(ZrTi)O (BZT) thin films were deposited via sol-gel process on LaNiO-coated silicon substrates. XRD showed that the crystallinity of BZT film grown on LaNiO coated silicon substrates is better than that of BZT film grown on Pt. Both films showed perovskite phase and polycrystalline structure. The temperature dependent dielectric measurements revealed that the thin films had the relaxor behavior and diffuse phase transition characteristics. The capacitor tuning was about 44% for each BZT film grown on LaNiO/Pt and Pt electrodes at 1 MHz. Especially, the values of dielectric loss at 1 MHz ranged from ∼0.02 to 0.009 in the bias range of 0 to 514 kV/cm, respectively. The leakage currents density of thin films grown on LaNiO/Pt and Pt electrodes at 300 kV/cm was about 8.5 × 10 and 1.1 × 10 A/cm, respectively. This work demonstrates a potential use of BZT films for application in tunable microwave devices.
KeywordFerroelectric thin films Relaxor behavior Sol-gel Tunability
DOI10.1023/B:JECR.0000026369.29093.ca
URLView the original
Language英語
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Tongji University
2.City University of Hong Kong
Recommended Citation
GB/T 7714
Jiwei Z.,Xi Y.,Bo S.,et al. Dielectric and ferroelectric properties of Ba(Zr0.35Ti 0.65)O3 thin films grown by a sol-gel process[J]. Journal of Electroceramics,2003,11(3):157-161.
APA Jiwei Z.,Xi Y.,Bo S.,Liangying Z.,&Chen H..(2003).Dielectric and ferroelectric properties of Ba(Zr0.35Ti 0.65)O3 thin films grown by a sol-gel process.Journal of Electroceramics,11(3),157-161.
MLA Jiwei Z.,et al."Dielectric and ferroelectric properties of Ba(Zr0.35Ti 0.65)O3 thin films grown by a sol-gel process".Journal of Electroceramics 11.3(2003):157-161.
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