UM
Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition
Yao Y.; Zhai J.; Chen H.
2004-06-01
Source PublicationJournal of Applied Physics
ISSN00218979
Volume95Issue:11 IPages:6341-6346
AbstractThe preparation of antiferroelectric lead lanthanum zirconate stanate titanate (PLZST) thin films by pulsed laser deposition was investigated. The Pb loss during the deposition process was found to play a key role in the formation of perovskite phase. The optimal processing conditions were found to be at 175° C substrate temperature and 600 °C postdeposition annealing temperature. The results show an increase in the dielectric strength from 425 kV/cm to 625 kV/cm.
DOI10.1063/1.1715136
URLView the original
Language英語
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Cited Times [WOS]:17   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationCity University of Hong Kong
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Yao Y.,Zhai J.,Chen H.. Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition[J]. Journal of Applied Physics,2004,95(11 I):6341-6346.
APA Yao Y.,Zhai J.,&Chen H..(2004).Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition.Journal of Applied Physics,95(11 I),6341-6346.
MLA Yao Y.,et al."Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition".Journal of Applied Physics 95.11 I(2004):6341-6346.
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