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Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films
Yao Y.2; Lu S.G.2; Chen H.2; Zhai J.1; Wong K.H.3
2004-07-01
Source PublicationJournal of Applied Physics
ISSN00218979
Volume96Issue:1Pages:569-574
AbstractThe role of oxygen pressure during the pulsed laser deposition of lead zirconate stannate titanates (PLZST) thin films was discussed. It was found that the oxygen pressure was in the range of 100-125 mTorr. The roughness of the films increases with increasing oxygen pressure. During deposition, fatigue and leakage current were also found to decrease with the oxygen pressure. The results show that for the samples deposited under higher oxygen pressure, there exist low-frequency dielectric dispersion process.
DOI10.1063/1.1758312
URLView the original
Language英語
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Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Tongji University
2.City University of Hong Kong
3.Hong Kong Polytechnic University
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Yao Y.,Lu S.G.,Chen H.,et al. Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films[J]. Journal of Applied Physics,2004,96(1):569-574.
APA Yao Y.,Lu S.G.,Chen H.,Zhai J.,&Wong K.H..(2004).Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films.Journal of Applied Physics,96(1),569-574.
MLA Yao Y.,et al."Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films".Journal of Applied Physics 96.1(2004):569-574.
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