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Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition
Yao Y.1; Lu S.G.1; Chen H.1; Wong K.H.2
2004-11-15
Source PublicationJournal of Applied Physics
ISSN00218979
Volume96Issue:10Pages:5830-5835
AbstractLanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570°C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800°C for a duration of 30 min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700°C could substantially improve the dielectric properties. However, annealing beyond 800°C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship. © 2004 American Institute of Physics.
DOI10.1063/1.1804226
URLView the original
Language英語
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.City University of Hong Kong
2.Hong Kong Polytechnic University
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GB/T 7714
Yao Y.,Lu S.G.,Chen H.,et al. Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition[J]. Journal of Applied Physics,2004,96(10):5830-5835.
APA Yao Y.,Lu S.G.,Chen H.,&Wong K.H..(2004).Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition.Journal of Applied Physics,96(10),5830-5835.
MLA Yao Y.,et al."Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition".Journal of Applied Physics 96.10(2004):5830-5835.
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