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Auger-type hole trapping process at green emission centers of ZnO Nanowires
Sum T.C.2; Li M.2; Xing G.2; Wu T.2; Xing G.1
2013
Conference NameConference on Lasers and Electro-Optics (CLEO)
Source Publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
Conference DateJUN 09-14, 2013
Conference PlaceSan Jose, CA
Abstract

The origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ∼180 meV between the GE-centers (located at ∼0.7 eV above the valence band) and the GE peak - yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type hole-trapping process to V that occurs in a sub-ps timescale. © 2013 The Optical Society.

DOIhttps://doi.org/10.1364/CLEO_QELS.2013.QM3D.3
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Optics ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Optics ; Physics, Applied
WOS IDWOS:000355262505040
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Document TypeConference paper
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation1.Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
2.Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
Recommended Citation
GB/T 7714
Sum T.C.,Li M.,Xing G.,et al. Auger-type hole trapping process at green emission centers of ZnO Nanowires[C],2013.
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