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Auger-type hole trapping process at green emission centers of ZnO nanowires
Sum T.C.; Li M.; Xing G.; Wu T.
2013-11-21
Source PublicationCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
AbstractThe origins of the green emission (GE) from ZnO nanostructures remain highly controversial despite extensive studies. Herein, transient absorption spectroscopy (TAS) revealed a small Stokes shift of ~180 meV between the GE-centers (located at ~0.7 eV above the valence band) and the GE peak - yielding the first experimental evidence of the GE originating from charge transitions of the ZnO di-vacancies proposed recently in density functional calculations. TAS also uncovered an ultrafast Auger-type holetrapping process to ZnO V that occurs in a sub-ps timescale. © OSA 2013.
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationNanyang Technological University
Recommended Citation
GB/T 7714
Sum T.C.,Li M.,Xing G.,et al. Auger-type hole trapping process at green emission centers of ZnO nanowires[C],2013.
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