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Electrical and optical properties of ZnO films grown by molecular beam epitaxy
Wang S.P.2; Shan C.X.2; Yao B.2; Li B.H.2; Zhang J.Y.2; Zhao D.X.2; Shen D.Z.2; Fan X.W.2
2009-02-15
Source PublicationApplied Surface Science
ISSN01694332
Volume255Issue:9Pages:4913-4915
AbstractZinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired. © 2008 Elsevier B.V. All rights reserved.
KeywordGrain boundary Hall mobility Molecular beam epitaxy Zinc oxide
DOI10.1016/j.apsusc.2008.12.035
URLView the original
Language英語
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Cited Times [WOS]:18   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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Wang S.P.,Shan C.X.,Yao B.,et al. Electrical and optical properties of ZnO films grown by molecular beam epitaxy[J]. Applied Surface Science,2009,255(9):4913-4915.
APA Wang S.P..,Shan C.X..,Yao B..,Li B.H..,Zhang J.Y..,...&Fan X.W..(2009).Electrical and optical properties of ZnO films grown by molecular beam epitaxy.Applied Surface Science,255(9),4913-4915.
MLA Wang S.P.,et al."Electrical and optical properties of ZnO films grown by molecular beam epitaxy".Applied Surface Science 255.9(2009):4913-4915.
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