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Degenerate layer at ZnO/sapphire interface
Li L.2; Shan C.X.2; Wang S.P.2; Li B.H.2; Zhang J.Y.2; Yao B.2; Shen D.Z.2; Fan X.W.2; Lu Y.M.3
2009-11-09
Source PublicationJournal of Physics D: Applied Physics
ISSN00223727 13616463
Volume42Issue:19
AbstractZinc oxide (ZnO) films have been prepared on sapphire substrates by molecular beam epitaxy. It is found that the electron concentration of the films decreases, while the mobility increases with increasing the film thickness. Temperature-dependent Hall measurement reveals the existence of a degenerate layer at the ZnO/sapphire interface, which will increase the electron concentration and decrease the mobility in the ZnO film. By using a two-layer conduction model, the electron concentration and mobility of the film excluding the influence of the degenerate layer have been determined. A fitting to the corrected electron concentration of the ZnO film yields an activation energy of about 31 meV for the residual donors. © 2009 IOP Publishing Ltd.
DOI10.1088/0022-3727/42/19/195403
URLView the original
Language英語
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Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
3.Shenzhen University
Recommended Citation
GB/T 7714
Li L.,Shan C.X.,Wang S.P.,et al. Degenerate layer at ZnO/sapphire interface[J]. Journal of Physics D: Applied Physics,2009,42(19).
APA Li L..,Shan C.X..,Wang S.P..,Li B.H..,Zhang J.Y..,...&Lu Y.M..(2009).Degenerate layer at ZnO/sapphire interface.Journal of Physics D: Applied Physics,42(19).
MLA Li L.,et al."Degenerate layer at ZnO/sapphire interface".Journal of Physics D: Applied Physics 42.19(2009).
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