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Control of N/N2 species ratio in NO plasma for p-type doping of ZnO
Chen X.3; Zhang Z.3; Yao B.2; Jiang M.3; Wang S.3; Li B.3; Shan C.3; Liu L.3; Zhao D.3; Shen D.3
2011-09-01
Source PublicationJournal of Applied Physics
Volume110
Issue5
AbstractNitrogen-doped ZnO thin films were grown on c-plane sapphire (Al O) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux, and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux, and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. © 2011 American Institute of Physics.
DOI10.1063/1.3626069
URLView the original
Language英語
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Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Jilin University
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Chen X.,Zhang Z.,Yao B.,et al. Control of N/N2 species ratio in NO plasma for p-type doping of ZnO[C],2011.
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