UM
Enhanced responsivity of highly spectrum-selective ultraviolet photodetectors
Ni P.-N.2; Shan C.-X.2; Wang S.-P.2; Li B.-H.2; Zhang Z.-Z.2; Zhao D.-X.2; Liu L.2; Shen D.-Z.2
2012-01-12
Source PublicationJournal of Physical Chemistry C
ISSN19327447 19327455
Volume116Issue:1Pages:1350-1353
AbstractHighly spectrum-selective photodetectors have been proposed and fabricated from the i-ZnO/n-ZnO structure. In this structure, the n-ZnO layer acts as a "filter" that filtrates out the short-wavelength photons to ensure the high spectrum selectivity of the photodetector. Meanwhile, the i-ZnO layer acts as a "multiplier" in which photogenerated carriers can be multiplied via an impact ionization process. In this way, photodetectors with their response width of only 9 nm have been obtained, and the responsivity of the photodetectors can reach 4.91 A/W at -5 V bias, corresponding to a quantum efficiency of 1600%. The results reported in this paper may provide a general route to high-performance, highly spectrum-selective photodetectors. © 2011 American Chemical Society.
DOI10.1021/jp210994t
URLView the original
Language英語
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Cited Times [WOS]:23   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Ni P.-N.,Shan C.-X.,Wang S.-P.,et al. Enhanced responsivity of highly spectrum-selective ultraviolet photodetectors[J]. Journal of Physical Chemistry C,2012,116(1):1350-1353.
APA Ni P.-N..,Shan C.-X..,Wang S.-P..,Li B.-H..,Zhang Z.-Z..,...&Shen D.-Z..(2012).Enhanced responsivity of highly spectrum-selective ultraviolet photodetectors.Journal of Physical Chemistry C,116(1),1350-1353.
MLA Ni P.-N.,et al."Enhanced responsivity of highly spectrum-selective ultraviolet photodetectors".Journal of Physical Chemistry C 116.1(2012):1350-1353.
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