UM
Enhanced responsivity of photodetectors realized via impact ionization
Yu J.2; Shan C.-X.2; Qiao Q.2; Xie X.-H.2; Wang S.-P.2; Zhang Z.-Z.2; Shen D.-Z.2
2012-02-01
Source PublicationSensors
ISSN14248220
Volume12Issue:2Pages:1280-1287
AbstractTo increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors. © 2012 by the authors; licensee MDPI, Basel, Switzerland.
KeywordImpact ionization Photodetector Responsivity
DOI10.3390/s120201280
URLView the original
Language英語
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Cited Times [WOS]:19   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Yu J.,Shan C.-X.,Qiao Q.,et al. Enhanced responsivity of photodetectors realized via impact ionization[J]. Sensors,2012,12(2):1280-1287.
APA Yu J..,Shan C.-X..,Qiao Q..,Xie X.-H..,Wang S.-P..,...&Shen D.-Z..(2012).Enhanced responsivity of photodetectors realized via impact ionization.Sensors,12(2),1280-1287.
MLA Yu J.,et al."Enhanced responsivity of photodetectors realized via impact ionization".Sensors 12.2(2012):1280-1287.
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