UM
Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer
Xie X.H.2; Zhang Z.Z.2; Li B.H.2; Wang S.P.2; Jiang M.M.2; Shan C.X.2; Zhao D.X.2; Chen H.Y.2; Shen D.Z.2
2013-06-10
Source PublicationApplied Physics Letters
ISSN00036951
Volume102Issue:23
AbstractWe report on a vertical geometry Mott-type visible (VIS)-blind Ultraviolet (UV) photodetector which was fabricated based on wurzite MgZnO (W-MgZnO) with a cubic MgZnO (C-MgZnO) anti-reflection layer. The C-MgZnO layer plays two roles in the detector, not only the conventional optical part but also electrical part. Photon-generated holes were restricted due to valence band offset. More "hot" electrons injected over a reduced Mott potential barrier at the metal-semiconductor interface, resulting in additional current contributing to photoresponse. This dual-function structure is a highly compact and wavelength-resonant UV detector, with a spectral response high-gain and fast. © 2013 AIP Publishing LLC.
DOI10.1063/1.4811153
URLView the original
Language英語
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Cited Times [WOS]:19   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Xie X.H.,Zhang Z.Z.,Li B.H.,et al. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer[J]. Applied Physics Letters,2013,102(23).
APA Xie X.H..,Zhang Z.Z..,Li B.H..,Wang S.P..,Jiang M.M..,...&Shen D.Z..(2013).Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer.Applied Physics Letters,102(23).
MLA Xie X.H.,et al."Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer".Applied Physics Letters 102.23(2013).
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