UM
Ultraviolet emissions realized in ZnO via an avalanche multiplication process
Yu J.2; Shan C.-X.2; Shen H.2; Zhang X.-W.2; Wang S.-P.2; Shen D.-Z.2
2013-07-01
Source PublicationChinese Physics B
ISSN16741056
Volume22Issue:7
AbstractAu/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO. © 2013 Chinese Physical Society and IOP Publishing Ltd.
Keywordavalanche multiplication light-emitting devices wide bandgap semiconductor
DOI10.1088/1674-1056/22/7/077307
URLView the original
Language英語
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Yu J.,Shan C.-X.,Shen H.,et al. Ultraviolet emissions realized in ZnO via an avalanche multiplication process[J]. Chinese Physics B,2013,22(7).
APA Yu J.,Shan C.-X.,Shen H.,Zhang X.-W.,Wang S.-P.,&Shen D.-Z..(2013).Ultraviolet emissions realized in ZnO via an avalanche multiplication process.Chinese Physics B,22(7).
MLA Yu J.,et al."Ultraviolet emissions realized in ZnO via an avalanche multiplication process".Chinese Physics B 22.7(2013).
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