UM
ZnO-based ultraviolet avalanche photodetectors
Yu J.3; Shan C.X.3; Huang X.M.1; Zhang X.W.3; Wang S.P.3; Shen D.Z.3
2013-07-31
Source PublicationJournal of Physics D: Applied Physics
ISSN00223727 13616463
Volume46Issue:30
AbstractBy virtue of the carrier avalanche multiplication caused by an impact ionization process occurring in MgO insulation layer, zinc oxide (ZnO)-based ultraviolet (UV) avalanche photodetectors (APDs) have been fabricated from Au/MgO/ZnO/MgO/Au structures. The responsivity of APDs can reach 1.7 × 10 A W , and the avalanche gain of the photodetectors is about 294 at 73 V. Considering that no previous report on ZnO APDs can be found, the results reported in this paper may promise a route to high-performance ZnO UV photodetectors. © 2013 IOP Publishing Ltd.
DOI10.1088/0022-3727/46/30/305105
URLView the original
Language英語
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Cited Times [WOS]:35   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Nanjing University
2.University of Chinese Academy of Sciences
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Yu J.,Shan C.X.,Huang X.M.,et al. ZnO-based ultraviolet avalanche photodetectors[J]. Journal of Physics D: Applied Physics,2013,46(30).
APA Yu J.,Shan C.X.,Huang X.M.,Zhang X.W.,Wang S.P.,&Shen D.Z..(2013).ZnO-based ultraviolet avalanche photodetectors.Journal of Physics D: Applied Physics,46(30).
MLA Yu J.,et al."ZnO-based ultraviolet avalanche photodetectors".Journal of Physics D: Applied Physics 46.30(2013).
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