UM
High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process
Hu G.C.2; Shan C.X.2; Zhang N.2; Jiang M.M.2; Wang S.P.2; Shen D.Z.2
2015
Source PublicationOptics Express
ISSN10944087
Volume23Issue:10Pages:13554-13561
AbstractGaO photodetectors with interdigitated electrodes have been designed and fabricated, and the GaO area exposed to illumination acts as the active layer of the photodetector, while the area covered by Au interdigital electrode provide an arena for carrier multiplication. The photodetectors show a maximum responsivity at around 255 nm and a cutoff wavelength of 260 nm, which lies in the solar-blind region. The responsivity of the photodetector reaches 17 A/W when the bias voltage is 20 V, which corresponds to a quantum efficiency of 8228%, amongst the best value ever reported in GaO film based solar-blind photodetectors.
DOI10.1364/OE.23.013554
URLView the original
Language英語
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Cited Times [WOS]:65   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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GB/T 7714
Hu G.C.,Shan C.X.,Zhang N.,et al. High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process[J]. Optics Express,2015,23(10):13554-13561.
APA Hu G.C.,Shan C.X.,Zhang N.,Jiang M.M.,Wang S.P.,&Shen D.Z..(2015).High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process.Optics Express,23(10),13554-13561.
MLA Hu G.C.,et al."High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process".Optics Express 23.10(2015):13554-13561.
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