UM
Ultra-low threshold avalanche gain from solarblind photodetector based on graded-band-gap-cubic-MgZnO
Xie X.; Zhang Z.; Li B.; Wang S.; Shen D.
2015-12-14
Source PublicationOptics Express
ISSN10944087
Volume23Issue:25Pages:32329-32336
AbstractA larger ratio of conduction-band offset to valence-band offset is the unique character for MgZnO alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times.
DOI10.1364/OE.23.032329
URLView the original
Language英語
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Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationChangchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Xie X.,Zhang Z.,Li B.,et al. Ultra-low threshold avalanche gain from solarblind photodetector based on graded-band-gap-cubic-MgZnO[J]. Optics Express,2015,23(25):32329-32336.
APA Xie X.,Zhang Z.,Li B.,Wang S.,&Shen D..(2015).Ultra-low threshold avalanche gain from solarblind photodetector based on graded-band-gap-cubic-MgZnO.Optics Express,23(25),32329-32336.
MLA Xie X.,et al."Ultra-low threshold avalanche gain from solarblind photodetector based on graded-band-gap-cubic-MgZnO".Optics Express 23.25(2015):32329-32336.
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