UM
Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface
Xie X.2; Li B.2; Zhang Z.2; Wang S.1; Shen D.2
2016
Source PublicationRSC Advances
ISSN20462069
Volume6Issue:41Pages:34955-34958
AbstractCarrier multiplication is one process for improving the performance of deep ultraviolet (DUV) photodetectors. Conduction band discontinuity can make electrons obtain additional kinetic energy by potential energy (equal to ΔE) reducing, and then have sufficient energy to impact a lattice generating electron-hole pairs to increase the internal photocurrent. An active layer consisting of four-period graded bandgap MgZnO with a steep MgZnO/MgZnO heterointerface, in which an impact ionization process takes place, has been demonstrated. The fabricated photodetector shows a DUV detection capability with a cutoff wavelength at ∼280 nm. The peak responsivity at about 250 nm nonlinearly increases with the applied reverse bias.
DOI10.1039/c6ra02919a
URLView the original
Language英語
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Cited Times [WOS]:3   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Universidade de Macau
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Xie X.,Li B.,Zhang Z.,et al. Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface[J]. RSC Advances,2016,6(41):34955-34958.
APA Xie X.,Li B.,Zhang Z.,Wang S.,&Shen D..(2016).Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface.RSC Advances,6(41),34955-34958.
MLA Xie X.,et al."Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface".RSC Advances 6.41(2016):34955-34958.
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