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Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition
Chen F.1; Fang X.1; Wang S.3; Niu S.1; Fang F.2; Fang D.1; Tang J.1; Wang X.1; Liu G.1; Wei Z.1
2016-04-25
Source PublicationHongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN10072276
Volume45Issue:4
AbstractThe influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300℃, 350℃ and 370℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370℃.
KeywordAluminum nitride Crystallization Deposition temperature Growth rate Plasma enhanced atomic layer deposition Surface roughness
DOI10.3788/IRLA201645.0421001
URLView the original
Language英語
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Changchun University of Science and Technology
2.Nanchang University
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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GB/T 7714
Chen F.,Fang X.,Wang S.,et al. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2016,45(4).
APA Chen F..,Fang X..,Wang S..,Niu S..,Fang F..,...&Wei Z..(2016).Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,45(4).
MLA Chen F.,et al."Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 45.4(2016).
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