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Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates
Ng K.W.2; Hwang J.M.1; Lau K.M.2
2008-10-01
Source PublicationJournal of Electronic Materials
ISSN03615235
Volume37Issue:10Pages:1560-1564
AbstractThe material and electrical properties of GaN-based light-emitting diodes (LEDs) grown on wet-etched stripe-patterned substrates were investigated. Footprint-like patterns, located directly above the inclined groove sidewalls, were found on the as-grown LED surface. Cross-sectional transmission electron microscopy (TEM) showed that 'tumor'-like structures with poor crystal quality were initiated on the inclined sidewalls, seeding dislocation bundles in the subsequently grown crystal. The high dislocation density slowed down the growth above the inclined sidewall, resulting in the uneven morphology. The fabricated devices showed over 30% enhancement in light output power as a result of improvements in both internal and extraction efficiencies. © 2008 TMS.
KeywordGaN Groove Light-emitting diode (LED) Patterned sapphire substrate Stripe Wet etch
DOI10.1007/s11664-008-0497-1
URLView the original
Language英語
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.National Tsing Hua University
2.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Ng K.W.,Hwang J.M.,Lau K.M.. Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates[J]. Journal of Electronic Materials,2008,37(10):1560-1564.
APA Ng K.W.,Hwang J.M.,&Lau K.M..(2008).Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates.Journal of Electronic Materials,37(10),1560-1564.
MLA Ng K.W.,et al."Growth and characterizations of GaN-Based LEDs grown on wet-etched stripe-patterned sapphire substrates".Journal of Electronic Materials 37.10(2008):1560-1564.
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