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Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates
Dubrovskii V.G.1; Nazarenko M.V.1; Chuang L.C.2; Ko W.S.2; Ng K.W.2; Chang-Hasnain C.2
2011-04-11
Source PublicationApplied Physics Letters
ISSN00036951
Volume98Issue:15
AbstractWe study theoretically and experimentally the time evolution of GaAs nanoneedles grown by metal organic chemical vapor deposition on silicon and sapphire substrates. A theoretical model is presented which provides explicitly the nanoneedle length as a function of growth time under the assumption of a fixed aspect ratio. Experimental data confirms that the aspect ratio remains approximately constant during the growth. From fitting the experimental length-time dependences, we estimate the effective arrival rates and the Ga diffusion lengths as being 3.5 nm/min and 80 nm on the silicon and 2.9 nm/min and 400 nm on the sapphire substrates, respectively. © 2011 American Institute of Physics.
DOI10.1063/1.3575556
URLView the original
Language英語
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被引频次[WOS]:6   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.St Petersburg National Research Academic University of the Russian Academy of Sciences
2.University of California, Berkeley
3.Ioffe Institute
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Dubrovskii V.G.,Nazarenko M.V.,Chuang L.C.,et al. Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates[J]. Applied Physics Letters,2011,98(15).
APA Dubrovskii V.G.,Nazarenko M.V.,Chuang L.C.,Ko W.S.,Ng K.W.,&Chang-Hasnain C..(2011).Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates.Applied Physics Letters,98(15).
MLA Dubrovskii V.G.,et al."Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates".Applied Physics Letters 98.15(2011).
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