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High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV
Tran T.-T.D.2; Sun H.2; Ng K.W.2; Ren F.2; Li K.2; Lu F.2; Yablonovitch E.2; Chang-Hasnain C.J.2
2014-06-11
Source PublicationNano Letters
ISSN15306992 15306984
Volume14Issue:6Pages:3235-3240
AbstractThe growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency. © 2014 American Chemical Society.
KeywordIII-V on Si Micropillars nanowires photoluminescence photovoltaics solar cells
DOI10.1021/nl500621j
URLView the original
Language英語
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Cited Times [WOS]:17   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Tsinghua University
2.University of California, Berkeley
Recommended Citation
GB/T 7714
Tran T.-T.D.,Sun H.,Ng K.W.,et al. High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV[J]. Nano Letters,2014,14(6):3235-3240.
APA Tran T.-T.D..,Sun H..,Ng K.W..,Ren F..,Li K..,...&Chang-Hasnain C.J..(2014).High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV.Nano Letters,14(6),3235-3240.
MLA Tran T.-T.D.,et al."High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV".Nano Letters 14.6(2014):3235-3240.
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