UM
Nanopillar lasers directly grown on silicon with heterostructure surface passivation
Sun H.2; Ren F.2; Ng K.W.2; Tran T.-T.D.2; Li K.2; Chang-Hasnain C.J.2
2014-07-22
Source PublicationACS Nano
ISSN1936086X 19360851
Volume8Issue:7Pages:6833-6839
AbstractSingle-crystalline wurtzite InGaAs/InGaP nanopillars directly grown on a lattice-mismatched silicon substrate are demonstrated. The nanopillar growth is in a core-shell manner and gives a sharp, defect-free heterostructure interface. The InGaP shell provides excellent surface passivation effect for InGaAs nanopillars, as attested by 50-times stronger photoluminescence intensities and 5-times greater enhancements in the carrier recombination lifetimes, compared to the unpassivated ones. A record value of 16.8% internal quantum efficiency for InGaAs-based nanopillars was attained with a 50-nm-thick InGaP passivation layer. A room-temperature optically pumped laser was achieved from single, as-grown InGaAs nanopillars on silicon with a record-low threshold. Superior material qualities of these InGaP-passivated InGaAs nanopillars indicate the possibility of realizing high-performance optoelectronic devices for photovoltaics, optical communication, semiconductor nanophotonics, and heterogeneous integration of III-V materials on silicon. © 2014 American Chemical Society.
Keywordcore-shell III-V compound on Si lasers nanopillars nanowires surface passivation
DOI10.1021/nn501481u
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:18   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Tsinghua University
2.University of California, Berkeley
Recommended Citation
GB/T 7714
Sun H.,Ren F.,Ng K.W.,et al. Nanopillar lasers directly grown on silicon with heterostructure surface passivation[J]. ACS Nano,2014,8(7):6833-6839.
APA Sun H.,Ren F.,Ng K.W.,Tran T.-T.D.,Li K.,&Chang-Hasnain C.J..(2014).Nanopillar lasers directly grown on silicon with heterostructure surface passivation.ACS Nano,8(7),6833-6839.
MLA Sun H.,et al."Nanopillar lasers directly grown on silicon with heterostructure surface passivation".ACS Nano 8.7(2014):6833-6839.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Sun H.]'s Articles
[Ren F.]'s Articles
[Ng K.W.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Sun H.]'s Articles
[Ren F.]'s Articles
[Ng K.W.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Sun H.]'s Articles
[Ren F.]'s Articles
[Ng K.W.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.