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Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays
Li Q.2; Ng K.W.2; Tang C.W.2; Lau K.M.2; Hill R.1; Vert A.1
2014-11-01
Source PublicationJournal of Crystal Growth
ISSN00220248
Volume405Pages:81-86
AbstractDefect reduction in epitaxial InP on nanopatterned exact Si (001) substrates was investigated. Top-down lithography and dry etching were used to define 30 nm-wide SiO trench openings, with concaves recessed into the Si substrates. Uniformly distributed and position-controlled InP seed arrays were formed by selective area growth. Afterwards, the SiO mask was removed and InP overgrowth on the seed arrays proceeded. By localizing defects in the buried Si concaves and promoting defect interactions during the coalescence process, a significant reduction in the x-ray linewidth has been achieved for InP layers grown on the nanopatterned Si as compared to blanket epitaxy. Anisotropic defect distribution in the coalesced InP films was observed and its dependency on seed layer thickness was also studied.
KeywordA1. Defects A3. Metal-organic chemical vapor deposition B1. Nanomaterials B2. Semiconducting III-V materials B2. Semiconducting indium phosphide
DOI10.1016/j.jcrysgro.2014.07.052
URLView the original
Language英語
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Cited Times [WOS]:19   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.SEMATECH Austin
2.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Li Q.,Ng K.W.,Tang C.W.,et al. Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays[J]. Journal of Crystal Growth,2014,405:81-86.
APA Li Q.,Ng K.W.,Tang C.W.,Lau K.M.,Hill R.,&Vert A..(2014).Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays.Journal of Crystal Growth,405,81-86.
MLA Li Q.,et al."Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays".Journal of Crystal Growth 405(2014):81-86.
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