|Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths|
|Deshpande S.; Bhattacharya I.; Malheiros-Silveira G.; Ng K.W.; Schuster F.; Mantei W.; Cook K.; Chang-Hasnain C.
|Source Publication||ACS Photonics
|Abstract||Highly compact III-V compound semiconductor active nanophotonic devices integrated with silicon are important for future low power optical interconnects. One approach toward realizing heterogeneous integration and miniaturization of photonic devices is through nanowires/nanopillars grown directly on silicon substrates. However, to realize their full potential, the integration of nanowires/nanopillars with silicon-based electronics must be made scalable via precise control of nanopillar site and dimensions. Here we demonstrate the first electrical-pumped InGaAs/InP multiquantum-well (MQW) light emitting diodes (LED) using nanopillar array directly grown on a Si substrate with site control, with current conduction directly through the silicon. The growth is via catalyst-free, low-temperature metal organic chemical vapor deposition, which is CMOS compatible. We report excellent optical properties including long minority carrier lifetimes and room-temperature lasing under optical pumping. InGaAs/InP quantum wells are incorporated in the nanopillars in a core-shell growth mode, to obtain silicon transparent emission of ∼1510 nm with high internal quantum efficiency (∼30%). Despite its small footprint, a high output power (4 μW) was measured, and the device could be electrically biased to produce optical gain. CMOS-compatible site-controlled growth and electrically driven long-wavelength emission make the InP nano-LED an ideal component in advanced photonic integrated circuits.|
photonic integrated circuit
|URL||View the original
|Document Type||Journal article
|Collection||University of Macau|
|Affiliation||University of California, Berkeley|
Deshpande S.,Bhattacharya I.,Malheiros-Silveira G.,et al. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J].
Deshpande S..,Bhattacharya I..,Malheiros-Silveira G..,Ng K.W..,Schuster F..,...&Chang-Hasnain C..(2017).Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths.ACS Photonics,4(3),695-702.
Deshpande S.,et al."Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths".ACS Photonics 4.3(2017):695-702.
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