UM
Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths
Deshpande S.; Bhattacharya I.; Malheiros-Silveira G.; Ng K.W.; Schuster F.; Mantei W.; Cook K.; Chang-Hasnain C.
2017-03-15
Source PublicationACS Photonics
ISSN23304022
Volume4Issue:3Pages:695-702
AbstractHighly compact III-V compound semiconductor active nanophotonic devices integrated with silicon are important for future low power optical interconnects. One approach toward realizing heterogeneous integration and miniaturization of photonic devices is through nanowires/nanopillars grown directly on silicon substrates. However, to realize their full potential, the integration of nanowires/nanopillars with silicon-based electronics must be made scalable via precise control of nanopillar site and dimensions. Here we demonstrate the first electrical-pumped InGaAs/InP multiquantum-well (MQW) light emitting diodes (LED) using nanopillar array directly grown on a Si substrate with site control, with current conduction directly through the silicon. The growth is via catalyst-free, low-temperature metal organic chemical vapor deposition, which is CMOS compatible. We report excellent optical properties including long minority carrier lifetimes and room-temperature lasing under optical pumping. InGaAs/InP quantum wells are incorporated in the nanopillars in a core-shell growth mode, to obtain silicon transparent emission of ∼1510 nm with high internal quantum efficiency (∼30%). Despite its small footprint, a high output power (4 μW) was measured, and the device could be electrically biased to produce optical gain. CMOS-compatible site-controlled growth and electrically driven long-wavelength emission make the InP nano-LED an ideal component in advanced photonic integrated circuits.
KeywordIII−V InP LEDs MOCVD growth nanowire laser nanowire/nanopillar photonic integrated circuit quantum-well silicon photonics
DOI10.1021/acsphotonics.7b00065
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:9   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Deshpande S.,Bhattacharya I.,Malheiros-Silveira G.,et al. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J]. ACS Photonics,2017,4(3):695-702.
APA Deshpande S..,Bhattacharya I..,Malheiros-Silveira G..,Ng K.W..,Schuster F..,...&Chang-Hasnain C..(2017).Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths.ACS Photonics,4(3),695-702.
MLA Deshpande S.,et al."Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths".ACS Photonics 4.3(2017):695-702.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Deshpande S.]'s Articles
[Bhattacharya I.]'s Articles
[Malheiros-Silveira G.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Deshpande S.]'s Articles
[Bhattacharya I.]'s Articles
[Malheiros-Silveira G.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Deshpande S.]'s Articles
[Bhattacharya I.]'s Articles
[Malheiros-Silveira G.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.