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Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands
Han Y.1; Ng W.K.1; Ma C.1; Li Q.1; Zhu S.1; Chan C.C.S.1; Ng K.W.3; Lennon S.2; Taylor R.A.2; Wong K.S.1; Lau K.M.1
2018-08-20
Source PublicationOptica
ISSN23342536
Volume5Issue:8Pages:918-923
AbstractSemiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a SiO2∕Si substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates.
DOI10.1364/OPTICA.5.000918
URLView the original
Language英語
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Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Hong Kong University of Science and Technology
2.University of Oxford
3.Universidade de Macau
Recommended Citation
GB/T 7714
Han Y.,Ng W.K.,Ma C.,et al. Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands[J]. Optica,2018,5(8):918-923.
APA Han Y..,Ng W.K..,Ma C..,Li Q..,Zhu S..,...&Lau K.M..(2018).Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands.Optica,5(8),918-923.
MLA Han Y.,et al."Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands".Optica 5.8(2018):918-923.
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