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Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film
Fan L.1; Chen Y.3; Liu Q.4; Chen S.3; Zhu L.1; Meng Q.1; Wang B.1; Zhang Q.1; Ren H.3; Zou C.3
2016-12-07
Source PublicationACS Applied Materials and Interfaces
ISSN19448252 19448244
Volume8Issue:48Pages:32971-32977
AbstractIn this work, high-quality VO epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO /GaN film device, we observed that the infrared transmittance and resistance of VO films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO -based optoelectronic device in the future.
Keywordinfrared transmission memory device n-GaN phase transition modulation vanadium dioxide
DOI10.1021/acsami.6b12831
URLView the original
Language英語
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Cited Times [WOS]:26   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Yancheng Institute of Technology
2.Nanjing Normal University
3.University of Science and Technology of China
4.Science and Technology on Electro-Optical Information Security Control Laboratory
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Fan L.,Chen Y.,Liu Q.,et al. Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film[J]. ACS Applied Materials and Interfaces,2016,8(48):32971-32977.
APA Fan L..,Chen Y..,Liu Q..,Chen S..,Zhu L..,...&Zou C..(2016).Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film.ACS Applied Materials and Interfaces,8(48),32971-32977.
MLA Fan L.,et al."Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film".ACS Applied Materials and Interfaces 8.48(2016):32971-32977.
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