|Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement|
|Wang L.; Ren H.; Chen S.; Chen Y.; Li B.; Zou C.; Zhang G.; Lu Y.
|Source Publication||Crystal Growth and Design
|Abstract||Vanadium dioxide (VO
) nanowires/microbeams have attracted great interest recently because of their pronounced single-domain metal-insulator phase transition (MIT) behavior, which is promising for various device applications and deeper mechanism investigation. It is known that monoclinic VO
nanostructures can be effectively prepared by a simple thermal evaporation method, while the growth of dense and ordered VO
micro/nanowires with controlled cross sections is still a challenge. In the current study, we have selected different crystal facets as the growth template and achieved controllable growth of well-aligned VO
micro/nanowire arrays. Combined with the crystal growth simulations, it is clarified that the epitaxial growth of VO
micro/nanowires on TiO
substrates is mainly dominated by both the initial crystallization mechanism and confinement of the crystal facets. The current studies not only show the potentials of fabricating VO
micro/nanowire array-based devices but also demonstrate a facile strategy for nanowire arrays growth assisted by anisotropic crystal facets.|
|URL||View the original
|Document Type||Journal article
|Collection||University of Macau|
|Affiliation||University of Science and Technology of China|
Wang L.,Ren H.,Chen S.,et al. Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement[J].
Crystal Growth and Design,2018,18(7):3896-3901.
Wang L..,Ren H..,Chen S..,Chen Y..,Li B..,...&Lu Y..(2018).Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement.Crystal Growth and Design,18(7),3896-3901.
Wang L.,et al."Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement".Crystal Growth and Design 18.7(2018):3896-3901.
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