UM
Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement
Wang L.; Ren H.; Chen S.; Chen Y.; Li B.; Zou C.; Zhang G.; Lu Y.
2018-07-05
Source PublicationCrystal Growth and Design
ISSN15287505 15287483
Volume18Issue:7Pages:3896-3901
AbstractVanadium dioxide (VO ) nanowires/microbeams have attracted great interest recently because of their pronounced single-domain metal-insulator phase transition (MIT) behavior, which is promising for various device applications and deeper mechanism investigation. It is known that monoclinic VO nanostructures can be effectively prepared by a simple thermal evaporation method, while the growth of dense and ordered VO micro/nanowires with controlled cross sections is still a challenge. In the current study, we have selected different crystal facets as the growth template and achieved controllable growth of well-aligned VO micro/nanowire arrays. Combined with the crystal growth simulations, it is clarified that the epitaxial growth of VO micro/nanowires on TiO substrates is mainly dominated by both the initial crystallization mechanism and confinement of the crystal facets. The current studies not only show the potentials of fabricating VO micro/nanowire array-based devices but also demonstrate a facile strategy for nanowire arrays growth assisted by anisotropic crystal facets.
DOI10.1021/acs.cgd.8b00212
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:3   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Science and Technology of China
Recommended Citation
GB/T 7714
Wang L.,Ren H.,Chen S.,et al. Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement[J]. Crystal Growth and Design,2018,18(7):3896-3901.
APA Wang L..,Ren H..,Chen S..,Chen Y..,Li B..,...&Lu Y..(2018).Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement.Crystal Growth and Design,18(7),3896-3901.
MLA Wang L.,et al."Epitaxial Growth of Well-Aligned Single-Crystalline VO 2 Micro/Nanowires Assisted by Substrate Facet Confinement".Crystal Growth and Design 18.7(2018):3896-3901.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang L.]'s Articles
[Ren H.]'s Articles
[Chen S.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang L.]'s Articles
[Ren H.]'s Articles
[Chen S.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang L.]'s Articles
[Ren H.]'s Articles
[Chen S.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.