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High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering
Zhang X.L.2; Hui K.S.1; Hui K.N.2
2013-02-01
Source PublicationMaterials Research Bulletin
ISSN00255408
Volume48Issue:2Pages:305-309
AbstractHigh performance ultraviolet (UV) detectors based on ZnO metal-semiconductor-metal (MSM) and p-n heterojunctions, p-NiO/n-ZnO, were fabricated and their UV photo-responsivity was measured at room temperature. High-quality ZnO and NiO thin films were deposited on quartz substrates at room temperature under optimized RF reactive sputtering conditions. For ZnO-based MSM UV detectors using Al as a contact metal, the linear current-voltage (I-V) characteristics under a forward bias exhibited ohmic metal-semiconductor contact. A maximum photocurrent and photo-responsivity of 2.5 mA and 1410 A/W, respectively, at 365 nm under 5 V bias was observed, indicating the high photo-responsivity of the ZnO MSM detector. In comparison, a p-NiO/n-ZnO p-n heterojunction UV detector demonstrated clear rectifying I-V characteristics with an ideality factor, forward threshold voltage and photo-responsivity of 2, 0.9 V and 0.09 A/W, respectively, at 362 nm under a reverse bias of 4 V, which is close to that of the commercial GaN UV detector (∼0.1 A/W). © 2012 Elsevier Ltd.
KeywordA. Semiconductors A. Thin films D. Electrical properties D. Optical properties
DOI10.1016/j.materresbull.2012.10.030
URLView the original
Language英語
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被引频次[WOS]:39   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.City University of Hong Kong
2.Pusan National University
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Zhang X.L.,Hui K.S.,Hui K.N.. High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering[J]. Materials Research Bulletin,2013,48(2):305-309.
APA Zhang X.L.,Hui K.S.,&Hui K.N..(2013).High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering.Materials Research Bulletin,48(2),305-309.
MLA Zhang X.L.,et al."High photo-responsivity ZnO UV detectors fabricated by RF reactive sputtering".Materials Research Bulletin 48.2(2013):305-309.
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