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Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method
Zhang X.L.5; Hui K.S.2; Bin F.4; Hui K.N.5; Li L.5; Cho Y.R.5; Mane R.S.1; Zhou W.3
2015
Source PublicationSurface and Coatings Technology
ISSN02578972
Volume261Pages:149-155
AbstractAl-Ni co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates using a sol-gel method. Based on a previous study, ZnAlO (AZO; Al/Zn=1.5mol%) thin films optimized with a Ni content of 0.5mol% were annealed at different temperatures from 450 to 600°C in N/H (95/5) forming gas for 1h. The effects of the annealing temperature on the structural, electrical and optical properties were determined. X-ray diffraction showed that NiAl:ZnO thin film annealed at 500°C exhibited the best crystallization quality. XPS revealed the presence of metallic Ni and NiO states, as well as Ni and Al atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. Scanning electron microscopy showed that the films were smooth and compact, and the grain size increased with increasing annealing temperature from ~23.8nm to ~34.6nm. According to the Hall Effect measurements, when the temperature reached 500°C, the resistivity of the thin film showed the lowest value of 1.05×10 (Ωcm), which is the lowest resistivity reported for NiAl:ZnO films. The UV-Vis transmission spectra showed a high transmittance of more than 80% in the visible light range, and the band gap of the films was increased from 3.30 to 3.55eV. This study showed that the annealing temperature in the forming gas is a vital factor affecting the quality of thin films. In addition, 500°C was found to be the most appropriate annealing temperature for NiAl:ZnO films. This study provides a simple and efficient method for preparing high quality, high transparency and low resistivity NiAl:ZnO films for optoelectronic applications.
KeywordAl-Ni co-doped ZnO Annealing temperature Forming gas Sol-gel method
DOI10.1016/j.surfcoat.2014.11.043
URLView the original
Language英語
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Cited Times [WOS]:18   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Swami Ramanand Teerth Marathwada University
2.Hanyang University
3.Xiamen University
4.Institute of Mechanics Chinese Academy of Sciences
5.Pusan National University
Recommended Citation
GB/T 7714
Zhang X.L.,Hui K.S.,Bin F.,et al. Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method[J]. Surface and Coatings Technology,2015,261:149-155.
APA Zhang X.L..,Hui K.S..,Bin F..,Hui K.N..,Li L..,...&Zhou W..(2015).Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method.Surface and Coatings Technology,261,149-155.
MLA Zhang X.L.,et al."Effect of thermal annealing on the structural, electrical and optical properties of Al-Ni co-doped ZnO thin films prepared using a sol-gel method".Surface and Coatings Technology 261(2015):149-155.
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