UM
Efficient quantum dot light-emitting diodes by controlling the carrier accumulation and exciton formation
Ji W.3; Tian Y.2; Zeng Q.3; Qu S.3; Zhang L.3; Jing P.3; Wang J.3; Zhao J.1
2014
Source PublicationACS Applied Materials and Interfaces
ISSN19448252 19448244
Volume6Issue:16Pages:14001-14007
AbstractThe performances and spectroscopic properties of CdSe/ZnS quantum dot light-emitting diodes (QD-LEDs) with inserting a thickness-varied 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer between the QD emission layer and 4,4-N,N-dicarbazole-biphenyl (CBP) hole transport layer (HTL) are studied. The significant enhancement in device peak efficiency is demonstrated for the device with a 3.5 nm TPBi interlayer. The photoluminescence lifetimes of excitons formed within QDs in different devices are also measured to understand the influence of electric field on the QD emission dynamics process and device efficiency. All the excitons on QDs at different devices have nearly the same lifetime even though at different bias. The improvement of device performance is attributed to the separation of charge carrier accumulation interface from the exciton formation zone, which suppresses exciton quenching caused by accumulated carriers. © 2014 American Chemical Society.
Keywordcarrier accumulation interface exciton formation zone exciton quenching inverted structure quantum dot light-emitting diodes
DOI10.1021/am5033567
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:43   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Jilin Normal University
2.Hong Kong Polytechnic University
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Ji W.,Tian Y.,Zeng Q.,et al. Efficient quantum dot light-emitting diodes by controlling the carrier accumulation and exciton formation[J]. ACS Applied Materials and Interfaces,2014,6(16):14001-14007.
APA Ji W..,Tian Y..,Zeng Q..,Qu S..,Zhang L..,...&Zhao J..(2014).Efficient quantum dot light-emitting diodes by controlling the carrier accumulation and exciton formation.ACS Applied Materials and Interfaces,6(16),14001-14007.
MLA Ji W.,et al."Efficient quantum dot light-emitting diodes by controlling the carrier accumulation and exciton formation".ACS Applied Materials and Interfaces 6.16(2014):14001-14007.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ji W.]'s Articles
[Tian Y.]'s Articles
[Zeng Q.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ji W.]'s Articles
[Tian Y.]'s Articles
[Zeng Q.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ji W.]'s Articles
[Tian Y.]'s Articles
[Zeng Q.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.