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High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors
Huo X.; Zhang M.; Chan P.C.H.; Liang Q.; Tang Z.K.
2004-12-01
Source PublicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages691-694
AbstractHigh frequency S parameters characterization up to 10 GHz for back-gate Carbon Nanotube Field-Effect Transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model. ©2004 IEEE.
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationHong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Huo X.,Zhang M.,Chan P.C.H.,et al. High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors[C],2004:691-694.
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