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ZnO p-n junction light-emitting diodes fabricated on sapphire substrates
Jiao S.J.3; Zhang Z.Z.3; Lu Y.M.3; Shen D.Z.3; Yao B.3; Zhang J.Y.3; Li B.H.3; Zhao D.X.3; Fan X.W.3; Tang Z.K.2
2006-01-30
Source PublicationApplied Physics Letters
ISSN00036951
Volume88Issue:3Pages:1-3
AbstractA ZnO p-n junction light-emitting diode (LED) was fabricated on a -plane Al2 O3 substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by a radio frequency atomic source was used to grow the p -type ZnO layer of the LED. The current-voltage measurements at low temperatures showed a typical diode characteristic with a threshold voltage of about 4.0 V under forward bias. With increasing temperature, the rectification characteristic was degraded gradually, and faded away at room temperature. Electroluminescence band of the ZnO p-n junction LED was located at the blue-violet region and was weakened significantly with increase of temperature. This thermal quenching of the electroluminescence was attributed to the degradation of the diode characteristic with temperature. © 2006 American Institute of Physics.
DOI10.1063/1.2166686
URLView the original
Language英語
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Cited Times [WOS]:242   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Hong Kong University of Science and Technology
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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GB/T 7714
Jiao S.J.,Zhang Z.Z.,Lu Y.M.,et al. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates[J]. Applied Physics Letters,2006,88(3):1-3.
APA Jiao S.J..,Zhang Z.Z..,Lu Y.M..,Shen D.Z..,Yao B..,...&Tang Z.K..(2006).ZnO p-n junction light-emitting diodes fabricated on sapphire substrates.Applied Physics Letters,88(3),1-3.
MLA Jiao S.J.,et al."ZnO p-n junction light-emitting diodes fabricated on sapphire substrates".Applied Physics Letters 88.3(2006):1-3.
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