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Room temperature p-n ZnO blue-violet light-emitting diodes
Wei Z.P.4; Lu Y.M.4; Shen D.Z.4; Zhang Z.Z.4; Yao B.4; Li B.H.4; Zhang J.Y.4; Zhao D.X.4; Fan X.W.4; Tang Z.K.3
2007-02-05
Source PublicationApplied Physics Letters
ISSN00036951
Volume90Issue:4
AbstractZnO p-n junction light-emitting diodes (LEDs) were fabricated on c -plane Al2 O3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N2 and O2 was used as the p -type dopant, by which the double-donor doping of N2 (O) can be avoided significantly. The fabricated p -type ZnO layers have a higher hole density and carrier mobility. The LEDs showed a very good rectification characteristic with a low threshold voltage of 4.0 V even at a temperature above 300 K. The LEDs can even emit intensive electroluminescence in the blue-violet region at the temperature of 350 K. The blue-violet emission was attributed to the donor-acceptor pair recombination at the p -type layer of the LED. © 2007 American Institute of Physics.
DOI10.1063/1.2435699
URLView the original
Language英語
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Cited Times [WOS]:166   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun University of Science and Technology
3.Hong Kong University of Science and Technology
4.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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GB/T 7714
Wei Z.P.,Lu Y.M.,Shen D.Z.,et al. Room temperature p-n ZnO blue-violet light-emitting diodes[J]. Applied Physics Letters,2007,90(4).
APA Wei Z.P..,Lu Y.M..,Shen D.Z..,Zhang Z.Z..,Yao B..,...&Tang Z.K..(2007).Room temperature p-n ZnO blue-violet light-emitting diodes.Applied Physics Letters,90(4).
MLA Wei Z.P.,et al."Room temperature p-n ZnO blue-violet light-emitting diodes".Applied Physics Letters 90.4(2007).
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