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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE
Lu Y.M.3; Wang X.3; Zhang Z.Z.3; Shen D.Z.3; Su S.C.3; Yao B.3; Li B.H.3; Zhang J.Y.3; Zhao D.X.3; Fan X.W.3; Tang Z.K.2
2007-04-01
Source PublicationJournal of Crystal Growth
ISSN00220248
Volume301-302Issue:SPEC. ISS.Pages:373-377
AbstractThe undoped ZnO thin films grown on Si (1 1 1) substrates by plasma-assisted molecular beam epitaxy (P-MBE) were reported. The effects of growth temperature, the thickness of low temperature ZnO buffer layer and Zn/O ratio on the quality of high-temperature-overgrown ZnO main layer were studied by atomic force microscopy (AFM), X-ray diffraction (XRD) and room-temperature photoluminescence (PL) spectra. These results showed that it was difficult to directly obtain high quality ZnO films on Si substrate. By introducing a thin ZnO buffer layer at 350 °C, c-axis preferred orientation ZnO films with improved optical properties were obtained at 750 °C. However, the thickness of ZnO buffer layer and Zn/O ratio in the ZnO main layer greatly influenced the quality of high-temperature-overgrown ZnO main layer. © 2007 Elsevier B.V. All rights reserved.
KeywordA1. Atomic force microscopy A1. Photoluminescence A1. X-ray diffraction A3. Molecular beam epitaxy B1. Zinc oxide
DOI10.1016/j.jcrysgro.2006.11.302
URLView the original
Language英語
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Cited Times [WOS]:20   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Hong Kong University of Science and Technology
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Lu Y.M.,Wang X.,Zhang Z.Z.,et al. Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE[J]. Journal of Crystal Growth,2007,301-302(SPEC. ISS.):373-377.
APA Lu Y.M..,Wang X..,Zhang Z.Z..,Shen D.Z..,Su S.C..,...&Tang Z.K..(2007).Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE.Journal of Crystal Growth,301-302(SPEC. ISS.),373-377.
MLA Lu Y.M.,et al."Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE".Journal of Crystal Growth 301-302.SPEC. ISS.(2007):373-377.
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