UM
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED
Zhang Z.Z.2; Wei Z.P.2; Lu Y.M.2; Shen D.Z.2; Yao B.2; Li B.H.2; Zhao D.X.2; Zhang J.Y.2; Fan X.W.2; Tang Z.K.1
2007-04-01
Source PublicationJournal of Crystal Growth
ISSN00220248
Volume301-302Issue:SPEC. ISS.Pages:362-365
AbstractA co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N was used as the acceptor dopant source and O was used as assistant gas for N decomposing more than only oxygen source. Emission spectra of the N+O mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.2×18 cm and a mobility approaching 1 cm V s. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100 K is about 3.70 V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523 nm, respectively. © 2006 Elsevier B.V. All rights reserved.
KeywordA3. Molecular beam epitaxy B2. Semiconducting II-VI materials B3. Light-emitting diodes
DOI10.1016/j.jcrysgro.2006.11.051
URLView the original
Language英語
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Cited Times [WOS]:24   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Hong Kong University of Science and Technology
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Zhang Z.Z.,Wei Z.P.,Lu Y.M.,et al. p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED[J]. Journal of Crystal Growth,2007,301-302(SPEC. ISS.):362-365.
APA Zhang Z.Z..,Wei Z.P..,Lu Y.M..,Shen D.Z..,Yao B..,...&Tang Z.K..(2007).p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED.Journal of Crystal Growth,301-302(SPEC. ISS.),362-365.
MLA Zhang Z.Z.,et al."p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED".Journal of Crystal Growth 301-302.SPEC. ISS.(2007):362-365.
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