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Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content
Li Y.F.3; Yao B.3; Lu Y.M.3; Wei Z.P.3; Gai Y.Q.3; Zheng C.J.3; Zhang Z.Z.3; Li B.H.3; Shen D.Z.3; Fan X.W.3; Tang Z.K.2
2007-12-14
Source PublicationApplied Physics Letters
ISSN00036951
Volume91Issue:23
AbstractUndoped Mgx Zn1-x O thin films with Mg content of 0≤x≤0.20 were grown on c -sapphire substrate by plasma-assisted molecular beam epitaxy. The Mgx Zn1-x O shows n -type conduction in Mg content of x≤0.05, and the carrier concentration decreases slowly from 1018 to 1017 cm-3 with increasing Mg content. However, as x0.10, the Mgx Zn1-x O begins to show p -type conduction, and the carrier concentration goes down sharply to 1015 cm-3 firstly and then increases slowly with increasing Mg content from 1015 to 1016 cm-3. The mechanism of transformation from n to p type and change of the carrier concentrations with Mg content were investigated by photoluminescence and absorption measurements as well as first-principle calculation. © 2007 American Institute of Physics.
DOI10.1063/1.2816914
URLView the original
Language英語
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Cited Times [WOS]:51   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Hong Kong University of Science and Technology
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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GB/T 7714
Li Y.F.,Yao B.,Lu Y.M.,et al. Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content[J]. Applied Physics Letters,2007,91(23).
APA Li Y.F..,Yao B..,Lu Y.M..,Wei Z.P..,Gai Y.Q..,...&Tang Z.K..(2007).Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content.Applied Physics Letters,91(23).
MLA Li Y.F.,et al."Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content".Applied Physics Letters 91.23(2007).
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