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Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors
Wei Z.P.1; Yao B.1; Li Y.F.1; Shen D.Z.1; Lu Y.M.1; Zhang Z.Z.1; Li B.H.1; Zheng C.J.1; Wang X.H.1; Zhang J.Y.1; Zhao D.X.1; Fan X.W.1; Tang Z.K.4
2008-11-01
Source PublicationJournal of the Korean Physical Society
Volume53
Issue5 PART 2
Pages3043-3046
AbstractWurtzite nitrogen-doped MgZnO (MgZnO:N) films were grown on c-plane sapphire by using plasma-assisted molecular beam epitaxy with radical NO as the oxygen source and nitrogen dopant. P-type conduction of MgZnO:N was obtained by decreasing the donor defects ((N), V, etc.) through annealing, revealing a hole concentration of 6.1 × 10 cm and a mobility of 6.42 cm/Vs. Furthermore, as-grown p-type films with a hole concentration of 1 × 10 cm and a mobility of 3 cm/Vs were obtained by decreasing the (N) double donor defect through control of the plasma conditions. ZnMgO:N/ZnO p-n junctions were obtained by using these p-type films. Diode-like, rectifying I-V characteristics with a threshold voltage of about 5 V and a different reverse leakage current were observed at room temperature.
KeywordN doping P-MBE ZnMgO/ZnO p-n junction
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
2.Chinese Academy of Sciences
3.Changchun University of Science and Technology
4.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Wei Z.P.,Yao B.,Li Y.F.,et al. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C],2008:3043-3046.
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