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Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire
Wei Z.P.1; Lu Y.M.1; Shen D.Z.1; Zhang Z.Z.1; Yao B.1; Li B.H.1; Zhang J.Y.1; Zhao D.X.1; Fan X.W.1; Tang Z.K.4
2008-11-01
Source PublicationJournal of the Korean Physical Society
Volume53
Issue5 PART 2
Pages3038-3042
AbstractNitrogen-doped p-type ZnO thin films were grown on c-plane sapphire (AlO) substrates by plasma-assistant molecular beam epitaxy, where O and N were introduced via a RF plasma source simultaneously. In situ optical emission spectra of the plasma were employed to monitor the chemical species in the active gas sources, one of the most important growth parameters. By adjusting the growth parameters, we confirm the optimal condition for p-type doping growth. The reproducible p-type ZnO thin films have the hole concentration (N - N) up to 1.0 × 10 cm and the resistivity of 6 Ωcm. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. Electroluminescence spectra centered about 430 nm were obtained even at 350 K.
KeywordElectroluminescence LED P-MBE P-type ZnO
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
2.Chinese Academy of Sciences
3.Changchun University of Science and Technology
4.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Wei Z.P.,Lu Y.M.,Shen D.Z.,et al. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C],2008:3038-3042.
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