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ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer
Chen M.1; Zhang Q.1; Su L.1; Su Y.1; Cao J.1; Zhu Y.1; Wu T.1; Gui X.1; Yang C.2; Xiang R.1; Tang Z.1
2012-09-01
Source PublicationMaterials Research Bulletin
ISSN00255408
Volume47Issue:9Pages:2673-2675
AbstractHigh quality ZnO epilayer with background electron concentration as low as 2.6 × 10 cm was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.029°. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal-semiconductor-metal (MSM) typed photodetector based on the material demonstrates a response of ∼43 A/W under the bias of 1 V and an ON/OFF ratio of 10 . This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping. © 2012 Elsevier Ltd.
KeywordA. Oxides B. Epitaxial growth C. X-ray diffraction D. Defects E. Electrical properties
DOI10.1016/j.materresbull.2012.05.054
URLView the original
Language英語
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被引频次[WOS]:15   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.Sun Yat-Sen University
2.Chinese Academy of Sciences
3.Hong Kong University of Science and Technology
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Chen M.,Zhang Q.,Su L.,et al. ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer[J]. Materials Research Bulletin,2012,47(9):2673-2675.
APA Chen M..,Zhang Q..,Su L..,Su Y..,Cao J..,...&Tang Z..(2012).ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer.Materials Research Bulletin,47(9),2673-2675.
MLA Chen M.,et al."ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer".Materials Research Bulletin 47.9(2012):2673-2675.
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