UM
Well-controlled wet etching of ZnO films using hydrogen peroxide solution
Wang Y.2; Wu T.1; Chen M.2; Su L.2; Zhang Q.2; Yuan L.2; Zhu Y.2; Tang Z.2
2014-02-15
Source PublicationApplied Surface Science
ISSN01694332
Volume292Pages:34-38
AbstractWe propose hydrogen peroxide (H O ) solution as a novel and promising etchant for ZnO thin film with well-controlled etching performances and enhanced ultraviolet (UV) luminescence, which is also facile, inexpensive and environmentally friendly. We have analyzed its etching mechanism and surface modification effect for ZnO. Using this etchant, fine patterns have been transferred to the ZnO single-crystal films with good fidelity. The etching performances have been comprehensively investigated using Raman spectroscopy, scanning electronic microscopy (SEM), atom force microscopy (AFM), surface profiler and photoluminescence (PL) spectrometer. The results have shown that ZnO films after the long-time etching exhibited linear etching rate, smooth profile and increased UV emission, which enables H O solution as an excellent wet etchant for various ZnO-based optoelectronic devices. © 2013 Elsevier B.V.
KeywordHydrogen peroxide Ultraviolet luminescence Wet etching Zinc oxide
DOI10.1016/j.apsusc.2013.11.053
URLView the original
Language英語
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被引频次[WOS]:9   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.Shenzhen Institute of Advanced Technology
2.Sun Yat-Sen University
3.Hong Kong University of Science and Technology
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Wang Y.,Wu T.,Chen M.,et al. Well-controlled wet etching of ZnO films using hydrogen peroxide solution[J]. Applied Surface Science,2014,292:34-38.
APA Wang Y..,Wu T..,Chen M..,Su L..,Zhang Q..,...&Tang Z..(2014).Well-controlled wet etching of ZnO films using hydrogen peroxide solution.Applied Surface Science,292,34-38.
MLA Wang Y.,et al."Well-controlled wet etching of ZnO films using hydrogen peroxide solution".Applied Surface Science 292(2014):34-38.
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