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Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures
Ji X.1; Zhu Y.1; Chen M.1; Su L.1; Chen A.1; Zhao C.1; Gui X.1; Xiang R.1; Huang F.1; Tang Z.1
2014-06-16
Source PublicationApplied Physics Letters
ISSN00036951
Volume104Issue:24
AbstractSurface water molecules induced grain boundaries (GBs) barrier modification was investigated in ZnO and ZnMgO/ZnO films. Tunable electronic transport properties of the samples by water were characterized via a field effect transistor (FET) device structure. The FETs fabricated from polar C-plane ZnO and ZnMgO/ZnO films that have lots of GBs exhibited obvious double Schottky-like current-voltage property, whereas that fabricated from nonpolar M-plane samples with GBs and ZnO bulk single-crystal had no obvious conduction modulation effects. Physically, these hallmark properties are supposed to be caused by the electrostatical coupling effect of crystal polar field and molecular dipole on GBs barrier. © 2014 AIP Publishing LLC.
DOI10.1063/1.4884942
URLView the original
Language英語
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Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Sun Yat-Sen University
2.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Ji X.,Zhu Y.,Chen M.,et al. Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures[J]. Applied Physics Letters,2014,104(24).
APA Ji X..,Zhu Y..,Chen M..,Su L..,Chen A..,...&Tang Z..(2014).Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures.Applied Physics Letters,104(24).
MLA Ji X.,et al."Grain boundary barrier modification due to coupling effect of crystal polar field and water molecular dipole in ZnO-based structures".Applied Physics Letters 104.24(2014).
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