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High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction
Su L.2; Zhang Q.2; Wu T.1; Chen M.2; Su Y.2; Zhu Y.2; Xiang R.2; Gui X.2; Tang Z.2
2014-08-18
Source PublicationApplied Physics Letters
ISSN00036951
Volume105Issue:7
AbstractLattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diode is potential for applications of portable UV detectors without driving power. © 2014 AIP Publishing LLC.
DOI10.1063/1.4893591
URLView the original
Language英語
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Cited Times [WOS]:33   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Shenzhen Institute of Advanced Technology
2.Sun Yat-Sen University
3.Hong Kong University of Science and Technology
Recommended Citation
GB/T 7714
Su L.,Zhang Q.,Wu T.,et al. High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction[J]. Applied Physics Letters,2014,105(7).
APA Su L..,Zhang Q..,Wu T..,Chen M..,Su Y..,...&Tang Z..(2014).High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction.Applied Physics Letters,105(7).
MLA Su L.,et al."High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction".Applied Physics Letters 105.7(2014).
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