UM
Controllable growth of high quality ZnO thin film on C-sapphire
Zhang Q.-L.2; Su L.-X.2; Wu T.-Z.1; Wang Y.-C.4; Zhu Y.2; Chen M.-M.2; Gui X.-C.2; Tang Z.-K.2
2015-10-01
Source PublicationFaguang Xuebao/Chinese Journal of Luminescence
ISSN10007032
Volume36Issue:10Pages:1171-1177
AbstractHigh quality ZnO thin film was obtained on c-sapphire substrate by using a technique of plasma assisted molecular beam epitaxy (P-MBE), in which MgO and low temperature ZnO are used as buffer layers. High-resolution XRD measurement shows the full width at half maximum (FWHM) of (002) and (102) are only 68.4 and 1 150 arcsec, respectively. In the meantime, atomically smooth surface with root mean square (RMS) surface roughness of 0.842 nm is realized. In addition, Raman and photoluminescence (PL) measurements show that ZnO layer has extremely low stress level and defect density. The realization of high quality ZnO thin film pays a good way for the application of ZnO-based optoelectronic devices.
KeywordBuffer Defects High quality thin film Stress ZnO
DOI10.3788/fgxb20153610.1171
URLView the original
Language英語
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Shenzhen Institute of Advanced Technology
2.Sun Yat-Sen University
3.Hong Kong University of Science and Technology
4.Xichang Satellite Launch Center
Recommended Citation
GB/T 7714
Zhang Q.-L.,Su L.-X.,Wu T.-Z.,et al. Controllable growth of high quality ZnO thin film on C-sapphire[J]. Faguang Xuebao/Chinese Journal of Luminescence,2015,36(10):1171-1177.
APA Zhang Q.-L..,Su L.-X..,Wu T.-Z..,Wang Y.-C..,Zhu Y..,...&Tang Z.-K..(2015).Controllable growth of high quality ZnO thin film on C-sapphire.Faguang Xuebao/Chinese Journal of Luminescence,36(10),1171-1177.
MLA Zhang Q.-L.,et al."Controllable growth of high quality ZnO thin film on C-sapphire".Faguang Xuebao/Chinese Journal of Luminescence 36.10(2015):1171-1177.
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