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Optical investigations of Be doped ZnO films grown by molecular beam epitaxy
Chen M.3; Zhu Y.2; Chen A.2; Shen Z.2; Tang Z.2
2016-06-01
Source PublicationMaterials Research Bulletin
ISSN00255408
Volume78Pages:16-19
AbstractIn this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.
KeywordLuminescence Optical properties Oxides Semiconductors Thin films
DOI10.1016/j.materresbull.2016.02.012
URLView the original
Language英語
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Cited Times [WOS]:5   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Universidade de Macau
2.Sun Yat-Sen University
3.Jiangsu University
Recommended Citation
GB/T 7714
Chen M.,Zhu Y.,Chen A.,et al. Optical investigations of Be doped ZnO films grown by molecular beam epitaxy[J]. Materials Research Bulletin,2016,78:16-19.
APA Chen M.,Zhu Y.,Chen A.,Shen Z.,&Tang Z..(2016).Optical investigations of Be doped ZnO films grown by molecular beam epitaxy.Materials Research Bulletin,78,16-19.
MLA Chen M.,et al."Optical investigations of Be doped ZnO films grown by molecular beam epitaxy".Materials Research Bulletin 78(2016):16-19.
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