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Phase-driven magneto-electrical characteristics of single-layer MoS 2
Yang C.-Y.3; Chiu K.-C.2; Chang S.-J.3; Zhang X.-Q.2; Liang J.-Y.3; Chung C.-S.3; Pan H.1; Wu J.-M.2; Tseng Y.-C.3; Lee Y.-H.2
2016-03-14
Source PublicationNanoscale
ISSN20403372 20403364
Volume8Issue:10Pages:5627-5633
Abstract

Magnetism of the MoS semiconducting atomic layer was highlighted for its great potential in the applications of spintronics and valleytronics. In this study, we demonstrate an evolution of magneto-electrical properties of single layer MoS with the modulation of defect configurations and formation of a partial 1T phase. With Ar treatment, sulfur was depleted within the MoS flake leading to a 2H (low-spin) → partial 1T (high-spin) phase transition. The phase transition was accompanied by the development of a ferromagnetic phase. Alternatively, the phase transition could be driven by the desorption of S atoms at the edge of MoS via O treatment while with a different ordering magnitude in magnetism. The edge-sensitive magnetism of the single-layer MoS was monitored by magnetic force microscopy and validated by a first-principle calculation with graded-Vs (sulfur vacancy) terminals set at the edge, where band-splitting appeared more prominent with increasing Vs. Treatment with Ar and O enabled a dual electrical characteristic of the field effect transistor (FET) that featured linear and saturated responses of different magnitudes in the I -V curves, whereas the pristine MoS FET displayed only a linear electrical dependency. The correlation and tuning of the Vs-1T phase transition would provide a playground for tailoring the phase-driven properties of MoS semiconducting atomic layers in spintronic applications.

DOI10.1039/c5nr08850j
URLView the original
Indexed BySCI
Language英语
WOS Research AreaChemistry ; Physics ; Materials Science ; Science & Technology - Other Topics
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000371665400028
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Cited Times [WOS]:8   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation1.Universidade de Macau
2.National Tsing Hua University
3.National Chiao Tung University Taiwan
Recommended Citation
GB/T 7714
Yang C.-Y.,Chiu K.-C.,Chang S.-J.,et al. Phase-driven magneto-electrical characteristics of single-layer MoS 2[J]. Nanoscale,2016,8(10):5627-5633.
APA Yang C.-Y..,Chiu K.-C..,Chang S.-J..,Zhang X.-Q..,Liang J.-Y..,...&Lee Y.-H..(2016).Phase-driven magneto-electrical characteristics of single-layer MoS 2.Nanoscale,8(10),5627-5633.
MLA Yang C.-Y.,et al."Phase-driven magneto-electrical characteristics of single-layer MoS 2".Nanoscale 8.10(2016):5627-5633.
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