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Low voltage low power CMOS temperature sensor circuit
Man Kay Law; Amine Bermak; Howard Cam Luong
2015-01-13
Rights HolderTHE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
Date Available2015-01-13
CountryUnited States
Subtype发明专利
Abstract

The present invention provides an ultra-low power embedded CMOS temperature sensor based on serially connected subthreshold MOS operation particularly well suited for passive RFID food monitoring applications. Employing serially connected subthreshold MOS as sensing element enables reduced minimum supply voltage for further power reduction, which is very important in passive RFID applications. The temperature sensor may be part of a passive RFID tag and incorporates a temperature sensor core, proportional-to-absolute-temperature (PTAT) and complimentary-to-absolute-temperature (CTAT) delay generators, and a time-to-digital differential readout circuit. In one embodiment, the sensor is embedded inside a passive UHF RFID tag fabricated with a conventional 0.18 μm 1P6M CMOS process. With the sensor core working under 0.5 V and digital interfacing under 1 V, the sensor dissipates a measured total power of 119 nW at 33 samples/s and achieves an inaccuracy of +1/?0.8° C. from ?10° C. to 30° C. after calibration.

Application Date2011-05-27
Patent NumberUS8931953B2
Language英语
Fulltext Access
Document TypePatent
CollectionINSTITUTE OF MICROELECTRONICS
AffiliationTHE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
Recommended Citation
GB/T 7714
Man Kay Law,Amine Bermak,Howard Cam Luong. Low voltage low power CMOS temperature sensor circuit. US8931953B2[P]. 2015-01-13.
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